| 1. | 3 . under the three different doping densities , we get the least grading length to make the spike vanish
在三种不同掺杂情况下，通过数值模拟得出消除能带尖峰所需的最小渐变长度。 |
| 2. | We get the conclusion : the higher the doping density is , the shorter grading length is wanted to make the spike vanish
并且得出结论： n型掺杂浓度越高，消除尖峰所需的渐变长度越短。 |
| 3. | We have grown ingaas / algaas strained quantum well laser by mbe . we studied the doped density in the cladding layer
采用分子束外延设备mbe ( molecularbeamepitaxy )对所设计的应变量子阱结构激光器进行晶体生长。 |
| 4. | The system we selected is the positive donor ion located in the centers of gaaslgaasal quantum well ( doped density of al is 0 . 33 ) in the process of calculation
在计算过程中，我们选取的体系是0中心的正施主离子处于gaas gaasai （其中以的搀杂浓度为0 |
| 5. | Bias voltage , which are related to the superlattice structural paraments , the doped densities and the applied bias voltage . we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations
超晶格的负微分电导区还导致出现固定偏压下随时间变化的电流自维持振荡，振荡产生的条件依赖于其结构参数，掺杂浓度和外加偏压的大小。 |
| 6. | For problems of vertical transport in the superlattice at fixed d . c . bias voltage , ode45 is optional . for problems of vertical transport in the superlattice with the increasing bias voltage and the relatively higher doped densities , ode15s is optional
针对较高难度问题，即研究偏压从零线性上升而且掺杂参数v较大时的超晶格纵向输运问题（ du / dt ( 0 ） ，一般首选ode15s 。 |
| 7. | Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density . therefore , quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig
重掺砷硅衬底片正日益受到器件厂家的青睐，所以研究重掺砷硅单晶中的氧沉淀及诱生缺陷对实现重掺衬底的内吸除有重大意义。 |
| 8. | Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基于流体动力学能量输运模型，对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件，且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同，界面态引起的器件特性的退化不同.沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大 |
